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AI chip design and high-performance computing: device and fab solutions for compute silicon

AI chip design needs the newest transistors and a die that survives its own power and heat: with Silvaco tools you develop the FinFET or gate-all-around device, see where the die sags or overheats, and optimize the fab process behind it.

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Where AI and HPC silicon gets hard

AI accelerators and data center chips are where the hardest parts of semiconductor development meet. Advanced CMOS transistors, high-bandwidth memory stacked beside the logic, chiplets, and the advanced package that holds them together each have to work on their own. Then they have to work as one product.

Power and heat decide whether that product can be built. A large compute die pulls heavy current through its supply network. That current heats the silicon, and the heat shifts how your transistors and wires behave. A design can simulate clean and still sag or run hot. Find that out after tapeout and you're paying for a re-spin.

Where Silvaco fits

From the transistor to the die's power and heat, then on to the fab when yield becomes the question.

  1. Your node and your die Process, transistor and layout
  2. Victory Process Builds FinFET and gate-all-around structures
  3. Victory Device Simulates the advanced CMOS device
  4. InVar Solves IR drop and temperature together
  5. Logic and Memory HBM, DRAM, 3D NAND and flash device work
  6. FTCO When yield at the fab is the constraint

Technologies and devices

The transistor, the memory beside it, the power and heat on the die, and the fab that makes it.

  • Advanced logic

    Develop planar CMOS, FinFET and gate-all-around transistors in Victory TCAD, which took on advanced CMOS in its 2024 release.

    Digital twin modeling comes with it, plus an atomistic quantum transport approach for gate-all-around devices.

  • High-bandwidth memory

    HBM sits in Silvaco's memory coverage next to 3D NAND, DRAM, flash and RRAM.

    You model the memory device in the same Victory TCAD tools you use for the logic.

  • Power and thermal

    InVar's thermal engine feeds temperature back into the IR-drop result, from a single cell up to the full chip.

    Hierarchical block models keep a large design quick to analyze without losing flat-run accuracy. Nothing needs pre-characterizing first.

  • Fab-level yield

    FTCO trains AI/ML models on TCAD physics and your fab data until they behave like your process: a digital twin you can experiment on.

    You use it for virtual experiments, design targeting and yield analysis. Micron already runs it in memory development.

Applications

From the transistor to signoff to the fab.

Results and reading for compute silicon

Post-layout runtime on a FinFET flow, gate-all-around device simulation, power integrity, and a digital twin at a memory maker.

More on compute silicon

Where does your die run hot?

Or maybe the harder problem is a gate-all-around transistor you can't characterize yet. Bring either one, and an application engineer will work through it with you on your own structure or design.

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AI chip design and HPC silicon, answered

Three things share one package: FinFET or gate-all-around transistors, high-bandwidth memory, and the advanced packaging that joins them. The die draws so much current that its own heat starts shifting device and wire behavior. In AI chip design, power delivery and temperature often decide whether a design can be built and still meet its targets.

Together, because current heats the die and temperature shifts resistance and current in return. InVar works on the transistor-level design with no pre-characterization, builds hierarchical block models and assembles a full-chip result from them. InVar Prime runs an early analysis while the floorplan is still open, so you can move blocks if the numbers come back bad.

High-bandwidth memory stacks DRAM dies and connects them to a processor over a very wide interface, usually inside an advanced package. Designing with it touches memory device development, power delivery and packaging at once. Its dies are DRAM, which Victory TCAD simulates at device level, and HBM appears in Silvaco's memory coverage by name.

At device level, Victory Process builds planar, FinFET and gate-all-around structures and Victory Device simulates them. Both gained gate-all-around coverage and digital twin modeling in 2024. InVar then signs off power integrity and temperature on the finished design. FTCO carries the same physics to the fab and optimizes the process itself.

Fab Technology Co-Optimization (FTCO) combines physics-based TCAD simulation with AI/ML and fab data into a digital twin of a process. Process engineers run virtual experiments and yield analysis on it without waiting on a TCAD specialist for every answer. Micron uses it in DRAM and 3D NAND development.

Yes, in several places. Victory TCAD has handled gate-all-around transistors since 2024, and InVar covers every process node, FinFET included. Silvaco's own IP is published at TSMC N3P too, among it an ultra-high-speed 2-port register file compiler. For your specific node and flow, check with our technical experts before you start an evaluation.

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