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September 3, 2026
This article presents a practical simulation workflow for predictive simulation of normally-off p-GaN high-electron-mobility transistors (HEMTs), with emphasis on device-physics calibration, leakage modeling, dynamic RDS(on), breakdown behavior, and machine-learning-assisted design exploration.
July 29, 2026
In this article we show a Fab Technology Co-Optimization (FTCO) workflow that connects GDS layout import, three-dimensional process simulation, GPU-accelerated FDTD, design of experiments (DOE), with AI-based surrogate modeling.
June 30, 2026
This paper presents TCAD process, mesh, and device simulations of a 1200 V vertical gallium nitride (GaN) FinFET using Silvaco Victory tools
April 27, 2026
In our latest Simulation Standard we examines how Silvaco’s AI-powered Fab Technology Co-Optimization (FTCO™) platform, combining simulation at scale, smart Design of Experiments (DOE), and machine learning (ML) surrogate models, is transforming the power device development workflow, with practical demonstrations on pGaN HEMTs, vertical GaN, and SiC DMOS technologies.
March 19, 2026
Next generation displays are utilizing tandem organic light-emitting diode (OLED) topologies to improve panel performance.
January 20, 2026
β-Ga2O3 is set to revolutionize high-voltage power conversion, with ultra-low losses and a high critical electric field that make it ideal for next-generation power devices, enabling three-phase HVDC AC/DC and DC/AC conversion in the 1–6 kV, 0.5–0.8 kA range for AI data centre power delivery, renewable energy systems, high-voltage circuit breakers, and ESD protection.
566 articles from 1998 to 2026, newest first.
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